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  this is information on a product in full production. september 2012 doc id 023261 rev 1 1/8 8 STTH5L04DEE turbo 2 ultrafast recovery diode datasheet ? production data features very low switching losses high frequency and high pulse current operation low thermal resistance high junction temperature ecopack ? 2 compliant component description the stth5l04 series uses st?s new 400 v planar pt doping technology. the stth5l04 is specially suited for switching mode base drive and transistor circuits. packaged in powerflat?, this device is intended for use in low profile applications. tm: powerflat is a trademark of stmicroelectronics table 1. device summary symbol value i f(av) 5 a v rrm 400 v t j (max) 150 c v f (typ) 0.85 v t rr (typ) 35 ns a a k a nc a nc a a nc a a a k k powerflat(3.3 x 3.3) STTH5L04DEE-tr www.st.com
characteristics STTH5L04DEE 2/8 doc id 023261 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 0.85 x i f(av) + 0.04 x i f 2 (rms) table 2. absolute ratings (limiting values t amb = 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 400 v i f(rms) forward rms current 15 a i f(av) average forward current t c = 120 c, ?? = 0.5 5 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 60 a t stg storage temperature range -65 to +150 c t j maximum operating junction temperature 150 c table 3. thermal resistance symbol parameter value unit r th(j-c) junction to case 4.5 c/w r th(j-a) junction to ambient on printed circuit board (with recommended footprint dimension, copper thickness = 35 m) 250 c/w table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) 1. pulse test: t p = 5 ms, ? < 2% reverse leakage current t j = 25 c v r = v rrm -2.5a t j = 125 c - 2.5 25 a v f (2) 2. pulse test: t p = 380 s, ? < 2% forward voltage drop t j = 25 c i f = 5a 1.05 1.25 v t j = 150 c - 0.85 1.05 table 5. dynamic electrical characteristics symbol parameter test cond itions min. typ. max. unit i rm reverse recovery current t j = 125 c i f = 5a, v r = 320 v, dl f /dt = -200 a/s -811a s factor softness factor - 0.7 t rr reverse recovery time t j = 25 c i f = 1a, v r = 30 v, dl f /dt = -50 a/s 43 60 ns i f = 1a, v r = 30 v, dl f /dt = -100 a/s -3550 t fr forward recovery time t j = 25 c i f = 5 a, v fr = 1.2 v dl f /dt = 100 a/s 110 ns v fp forward recovery voltage t j = 25 c - 2 3 v
STTH5L04DEE characteristics doc id 023261 rev 1 3/8 figure 1. average forward power dissipation versus average forward current figure 2. forward voltage drop versus forward current p f(av) (w) 0 1 2 3 4 5 6 7 8 01234567 t =tp/t tp i f(av) (a) = 1 = 0.5 = 0.2 = 0.1 = 0.05 i fm (a) 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 t j =150 c (maximum values) t j =150 c (typical values) t j =25 c (maximum values) v fm (v) figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus dl f /dt (typical values) z th(j-c) /r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t p (s) 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 i rm (a) i f =i f(av) v r =320 v t j =125 c di f /dt(a/s) figure 5. reverse recovery time versus dl f /dt (typical values) figure 6. reverse recovery charges versus dl f /dt (typical values) 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 250 300 350 400 450 500 t rr (ns) i f =i f(av) v r =320 v t j =125 c di f /dt(a/s) q rr (nc) 0 40 80 120 160 200 240 280 320 360 400 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =320 v t j =125 c di f /dt(a/s)
characteristics STTH5L04DEE 4/8 doc id 023261 rev 1 figure 7. reverse recovery softness factor versus dl f /dt (typical values) figure 8. relative variation of dynamic parameters versus junction temperature s factor 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =320 v t j =125 c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 i f =i f(av) v r =320 v reference: t j =125 c i rm s factor q rr t j (c) figure 9. transient peak forward voltage versus dl f /dt (typical values) figure 10. forward recovery time versus dl f /dt (typical values) v fp (v) 0 1 2 3 4 5 6 7 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) t j =125 c di f /dt(a/s) t f (ns) r 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v fr =1.2v t j =125 c di f /dt(a/s) figure 11. junction capacitance versus reverse voltage applied (typical values) figure 12. thermal resistance junction to ambient versus copper surface under tab c(pf) 100 1 10 1 10 100 1000 f=1 mhz v osc =30 mv rms t j =25 c v r (v) r th(j-a) (c/w) 0 50 100 150 200 250 012345678910 powerflat (3.3x3.3) s cu (cm2) epoxy printed board fr4, copper thickness =35m
STTH5L04DEE package information doc id 023261 rev 1 5/8 2 package information epoxy meets ul94,v0 lead-free package in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 13. powerflat (3.3 x 3.3) dimensions (definitions) table 6. powerflat (3.3 x 3.3) dimensions (values) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.95 1.0 0.037 0.039 a3 0.2 0.008 b 0.29 0.34 0.39 0.011 0.013 0.015 d 3.20 3.30 3.40 0.126 0.130 0.134 d2 2.24 2.29 2.34 0.088 0.090 0.092 e 3.20 3.30 3.40 0.126 0.130 0.134 e2 1.66 1.71 1.76 0.065 0.067 0.069 e 0.65 0.026 l 0.40 0.016 l1 0.45 0.50 0.55 0.018 0.20 0.22 0.10 mm ref. d2 l e2 l1 b e e/2 a a3 e e/2 d d/2 a k k a projection exposed pad index area (d/2 x e/2) 0.10 mm ref. 0.20 mm ref. nc nc
package information STTH5L04DEE 6/8 doc id 023261 rev 1 figure 14. footprint (dimensions in mm) 0.44 0.6 0.59 1.195 2.39 2.21 3.4 0.65 0.325
STTH5L04DEE ordering information doc id 023261 rev 1 7/8 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode STTH5L04DEE-tr th5l04 power flat (3.3 x 3.3) 34 mg 3000 tape and reel 13? reel table 8. document revision history date revision changes 11-sep-2012 1 first issue.
STTH5L04DEE 8/8 doc id 023261 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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